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SCALE-2 驅動核

驅動核是具備驅動器所有基本功能的基於 PCB的驅動模塊,這些基本功能包括電氣隔離、各種保護、DC/DC電源等。除了驅動核外,客戶的PCB上還需包含其他附加元件 – 如輸入接口、閘極電阻、有源箝位等,這些元件與驅動核一起 構成了完整的IGBT驅動器。 IGBT驅動核的隔離電壓介於600 V到6.5 kV之間,每個通道的功率介於1 W到20 W之間。它們還適用於驅動功率MOSFET以及其他開關頻率可達500kHz的新型半導體器件。

Products
產品
說明
最大擊穿電壓
Power Switch
1SC0450

Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link

Description

Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link

Max Breakdown Voltage 1700 V Power Switch IGBT
1SC2060P

Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz

Description

Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz

Max Breakdown Voltage 1700 V Power Switch IGBT, SiC MOSFET
2SC0106T

Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function

Description

Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function

Max Breakdown Voltage 1200 V Power Switch IGBT
2SC0108T

Dual-channel SCALE-2+ driver core, ighest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power

Description

Dual-channel SCALE-2+ driver core, ighest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power

Max Breakdown Voltage 1700 V Power Switch IGBT
2SC0115T

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

Description

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

Max Breakdown Voltage 1200 V Power Switch IGBT, SiC MOSFET
2SC0435T

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

Description

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

Max Breakdown Voltage 1700 V Power Switch IGBT, SiC MOSFET
2SC0535T

Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power

Description

Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power

Max Breakdown Voltage 3300 V Power Switch IGBT, SiC MOSFET
2SC0650P

Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Description

Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Max Breakdown Voltage 1700 V Power Switch IGBT, SiC MOSFET
2SD300C17

Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Description

Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Max Breakdown Voltage 1700 V Power Switch IGBT