Webinar: GaN vs SiC - Electronic Specifier

GaN vs SiC: selecting the right wide bandgap technology for your application

Join Electronic Specifier for a technical webinar exploring the key differences between gallium nitride (GaN) and silicon carbide (SiC), and how to determine the most suitable wide bandgap semiconductor technology for your application.

As power density, efficiency, and thermal performance become increasingly critical in applications ranging from consumer electronics to automotive, the decision between GaN and SiC is more important than ever. This session will compare electrical characteristics, voltage ranges, thermal behavior, reliability, cost considerations, and packaging options, helping design engineers make informed technology choices.

Featured Speakers

• Host: Paige West, Managing Editor, Electronic Specifier
• Laszlo Balogh, DMTS, High Voltage Power, Texas Instruments
• Pietro Scalia, Senior Director of Power System Marketing and Architecture, Power Product Group, Renesas Electronics
• Kamal Varadarajan, Director of Technology Development, Power Integrations
• Peter Friedrichs, Fellow SiC, Infineon Technologies