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SID11x2K

具有先进的安全和保护功能的电气绝缘的单通道门极驱动器IC

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Product Parts
产品
数据手册
RDK
Gate Peak Current (Max)
IGBT电压等级
最大开关频率
支持的模块
逻辑输入电压
保护功能
技术
接口类型
支持的拓扑
电源电压 (典型)
隔离类型
Isolation Technology
時間 - 輸出下降
時間 - 輸出上升
驱动模式
主/外围
并行支持?
Data Sheet 查看PDF
RDK
Gate Peak Current (Max) +1 A
IGBT Voltage Class 1200 V
Max Switching Frequency 250.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No
Data Sheet 查看PDF
RDK
Gate Peak Current (Max) +2 A
IGBT Voltage Class 1200 V
Max Switching Frequency 250.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No
Data Sheet 查看PDF
RDK
Gate Peak Current (Max) +5 A
IGBT Voltage Class 1200 V
Max Switching Frequency 250.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No
Data Sheet 查看PDF
RDK
Gate Peak Current (Max) +8 A
IGBT Voltage Class 1200 V
Max Switching Frequency 250.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No

SID11x2K是采用标准eSOP封装的单通道IGBT和MOSFET驱动器。该器件利用Power Integrations创新的固体绝缘FluxLink技术实现了加强电气绝缘。其峰值输出驱动电流可达8 A,可直接驱动600 A(典型值���的开关器件,而无需任何额外的有源元件。对于更大电流的半导体器件,其所要求的门极电流会超出SID11x2K的最大输出电流,可以在外部添加一个放大器(推动级)。稳定的门极正负电压由一个单极隔离电压源提供。

该器件还具有带高级软关断(ASSD)的短路保护(DESAT)、用于原方/副方的欠压保护(UVLO)以及带温度和过程补偿输出阻抗的轨到轨输出等更多功能,可确保产品即使在严苛的条件下也能安全工作。

控制器(PWM和故障)信号兼容5 V CMOS��辑电平,使用外部电阻分压可将逻辑电平调整到15 V。

  • 高度集成,封装紧凑
    • 独立的门极开通和关断管脚,可提供8 A峰值驱动电流
    • 集成的FluxLink™技术为原方与副方提供可靠绝缘
    • 稳定的轨到轨输出电压
    • 副方供电为单极电源电压
    • 适合600 V/650 V/1200 V IGBT和MOSFET功率开关
    • 开关频率最高250 kHz
    • 传输延迟时间非常短,仅为260 ns
    • 传输延迟抖动±5 ns
    • 工作环境温度介于-40°C至125°C之间
    • 具有较高的共模瞬态抗扰性
    • 采用9.5 mm电气间隙和爬电距离的eSOP封装
  • 先进的保护/安全功能
    • 原方和副方欠压保护(UVLO)与故障反馈
    • 采用VCESAT监控和故障反馈二极管*或电阻串**的短路保护(参见图1)
    • 高级软关断(ASSD)
  • 完全符合各项安规要求
    • 产品100%进行局部放电测试
    • 产品100%进行6 kV RMS 1秒的HIPOT合规性测试
    • 符合VDE 0884-10的加强绝缘标准
    • UL认证:E358471
    • 相比漏电起痕指数(CTI) = 600
  • 环保封装
    • 无卤素且符合RoHS标准

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