解决方案搜寻 技术支持

白皮书和文章

1250V/1700V PowiGaN HEMT在800VDC AI数据中心架构中的应用

人工智能计算的需求正在推动数据中心电源架构向更高效率和更高功率密度发展。Power Integrations 在这篇新的白皮书中解释了 1250 V 和 1700 V PowiGaN 氮化镓(GaN)技术在下一代电源架构中的应用能力。

该白皮书在 2025 年 OCP 全球峰会上发布,NVIDIA™ 在会上分享了向 800 VDC 数据中心电源过渡以支持兆瓦级机架的见解。

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Article - Future Electronics - How MinE-CAP Shrinks Bulk Capacitor Size

Everyone likes smaller AC-DC adapters, and GaN technology has hastened the production of high-density converters. Despite this progress, the bulk capacitor remains challenging to shrink. Power Integrations has a solution with its MinE-CAP ICs, which dynamically adjust bulk input capacitance based on input voltage. This results in a substantial reduction of occupied volume, making it easier for designers to meet high power density requirements.

Article - How to Design Small USB-C PD and PPS Adapters

The pressure on the designer is relentless - develop ever-smaller chargers and adapters that deliver full USB-C Power Delivery (PD), Programmable Power Supply (PPS) functionality, and faster charging times for smartphones, tablets, notebooks and other portable devices. Keys to designing smaller chargers and adapters include reducing component count and maximizing

Optimizing Efficiency and Output Regulation for Dual-Output Flyback Converters with 1700 V GaN Switch

During PCIM Europe 2025 in Nuremberg, Han Cui gave a poster presentation about replacing SiC switches with 1700 V GaN devices in high-input voltage industrial applications. The world's first 1700 V GaN switch is now available in a new member of the InnoMux-2 flyback switcher IC family. In less than two years, Power Integrations has delivered three voltage-rating breakthroughs with its #PowiGaN technology, from 900 V to 1250 V, and now 1700 V.

文章 – 适合于电表的防干扰 隔离反激式电源

本文简要回顾了反激式电源中磁干扰背后的物理学原理,并介绍了一种抗磁干扰的双路输出隔离反激式电源

设计。本文最后讨论了抗磁干扰电源与传统设计的电源之间的测试和性能比较。

Silvestro Fimiani - 资深产品营销经理