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Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Galvanic Isolation up to 650 V Blocking Voltage

Product Details

The SID11x1K is a single channel IGBT and MOSFET driver in an eSOP package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink technology. 8 A peak output drive current enables the product to drive devices up to 600 A (typical) without requiring any additional active components. For gate drive requirements that exceed the stand-alone capability of the SID11x1K’s, an external amplifier (booster) may be added. Stable positive and negative voltages for gate control are provided by one unipolar isolated voltage source.

Additional features such as short-circuit protection (DESAT) with Advanced Soft Shut Down (ASSD), undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature and process compensated output impedance guarantee safe operation even in harsh conditions.

Controller (PWM and fault) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider.

Max Switching Frequency 75.00 kHz
IGBT Voltage Class 1200 V
Technology SCALE-iDriver
Interface Type Electrical
Number of Channels 1
Gate Peak Current (Max) +8 A
Product Type IC
Product Sub-Type Driver IC
Supported Module Type IGBT N-Channel MOSFET
Main/Peripheral N/A
Supported Topologies 2-level Voltage Source 3-level NP-Clamped - Type 1 3-level NP-Clamped - Type 2 Multi-Level NP-Clamped
Protection Features Basic Active Clamping Adv Soft Shutdown Dynamic Adv Active Clamping Short Circuit UVLO(Sec-side) UVLO(Pri-side)
Driving Mode Direct-Independent
Logic Input Voltage 5
Supply Voltage (Typ) 5.00 V
Time - Output Rise 22.00 ns
Time - Output Fall 18.00 ns
Isolation Technology Fluxlink
Isolation Type Basic
Gate Peak Current (Min) -8