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Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications


Product Details

SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.

SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.


Max Switching Frequency 150.00 kHz
IGBT Voltage Class 1200 V
Technology SCALE-iDriver
Interface Type Electrical
Number of Channels 1
Gate Peak Current (Max) +8 A
Product Type IC
Product Sub-Type Driver IC
Supported Module Type
Silicon Carbide
Main/Peripheral N/A
Supported Topologies
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
Protection Features
Adv Active Clamping
Dynamic Adv Active Clamping
Short Circuit
Driving Mode Direct-Independent
Logic Input Voltage 5
Supply Voltage (Typ) 5.00 V
Time - Output Rise 22.00 ns
Time - Output Fall 18.00 ns
Isolation Technology Fluxlink
Isolation Type Reinforced
Gate Peak Current (Min) -8