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SIC118xKQ

Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

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Product
Data Sheet
IGBT Voltage Class
Max Switching Frequency
Gate Peak Current (Max)
Supported Module Type
Logic Input Voltage
Protection Features
Technology
Interface Type
Supported Topologies
Supply Voltage (Typ)
Isolation Type
Isolation Technology
Time - Output Fall
Time - Output Rise
Driving Mode
Data Sheet View PDF
IGBT Voltage Class 750 V
Max Switching Frequency 150.0 kHz
Gate Peak Current (Max) +8 A
Supported Module Type IGBT, Silicon Carbide
Logic Input Voltage 5
Protection Features Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Data Sheet View PDF
IGBT Voltage Class 1200 V
Max Switching Frequency 150.0 kHz
Gate Peak Current (Max) +8 A
Supported Module Type IGBT, Silicon Carbide
Logic Input Voltage 5
Protection Features Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent

SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.

SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.

Highly Integrated, Compact Footprint

  • ±8 A peak gate output current
  • Integrated FluxLink™ technology provides reinforced isolation
  • SiC MOSFET optimized Advanced Active Clamping
  • Ultrafast short-circuit detection
  • UVLO primary and secondary side
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Up to 150 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to +125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance, CTI 600

Protection / Safety Features

  • Undervoltage lock-out protection for primary and secondary-side, including fault feedback
  • Over-current detection for SiC MOSFETs with a current-sense terminal
  • Ultrafast short-circuit monitoring, turn-off and reporting
  • Advanced Active Clamping (AAC) provides overvoltage limitation during SiC MOSFET turn-off

Full Safety and Regulatory Compliance

  • 100% production partial discharge test
  • 100% production HIPOT compliance testing at 8000 V peak for 1 s
  • Reinforced insulation pending VDE V 0884-11 certification
  • UL 1577 recognized
  • AEC Q-100 qualified for automotive grade level 1

Green Package

  • Halogen free and RoHS compliant

Applications

  • Electric vehicle BEV traction drives
  • Hybrid electric vehicle PHEV traction drives
  • Electric vehicle on-board and off-board chargers