White Paper - Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications

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White Paper - Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications

PI's industry-first 1250 V GaN-based switcher ICs allow significant transient overvoltage capability, which is crucial to EV and industrial applications that require high voltage and high reliability. During PCIM Europe 2024, our PowiGaN expert Kamal Varadarajan provided insight into this trailblazing technology.

Download the white paper: Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications

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