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Maintaining SiC MOSFET Efficiency and Protection without Compromise

The efficiency and size benefits of SiC devices have been enthusiastically embraced by designers of industrial, automotive, traction systems and photovoltaic power conversion. To provide more detail, the lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity—valuable

提供加强电气绝缘的革命性的高压IGBT驱动器产品系列,可驱动耐压在1200 V以 内的开关半导体

Power Integrations SCALE-iDriver™ IGBT及功率MOSFET门极驱动器的推出,让高可靠性中低压电子电力系统的设计变得更为轻松容易。新驱动器集成了Power Integrations独有的FluxLink™技术 —— 一种固体绝缘磁感耦合通信技术。FluxLink接口和eSOP封装可提供符合VDE0884-11及IEC60747-17标准的加强电气绝缘,并且具有非常强电磁干扰(EMI)及磁场抗扰性,可使生产厂商轻松达到IEC61000-4-8及IEC61000-4-9标准。