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SIC1182K

Up to 8 A Single Channel SiC MOSFET Gate Driver Providing Advanced Active Clamping and Reinforced Isolation Up to 1200 V

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Product
Data Sheet
IGBT Voltage Class
Max Switching Frequency
Gate Peak Current (Max)
Main/Peripheral
Supported Module Type
Logic Input Voltage
Protection Features
Technology
Supported Topologies
Interface Type
Supply Voltage (Typ)
Isolation Type
Isolation Technology
Time - Output Fall
Time - Output Rise
Driving Mode
Paralleling Support?
Data Sheet View PDF
IGBT Voltage Class 1200 V
Max Switching Frequency 150.0 kHz
Gate Peak Current (Max) +8 A
Main/Peripheral N/A
Supported Module Type Silicon Carbide
Logic Input Voltage 5
Protection Features Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Interface Type Electrical
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 18 ns
Time - Output Rise 22 ns
Driving Mode Direct-Independent
Paralleling Support? No

The SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature- and process-compensated output impedance guarantee safe operation even in harsh conditions.

Furthermore, this gate driver IC has a new feature, advanced active clamping (at turn-off phase), combining short-circuit protection (at and during turn-on phase) as well as overvoltage limitation, through a single sensing pin. If the driven semiconductor provides a current-sense terminal, adjustable over-current detection is supported.

Highly Integrated, Compact Footprint

  • Suitable for 600 V / 650 V / 1200 V SiC MOSFET switches
  • ±8 A peak gate output current
  • Integrated FluxLink™ technology providing reinforced isolation
  • Advanced Active Clamping
  • UVLO primary and secondary side
  • Over-current fault turn-off
  • Short-circuit current fault turn-off
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Up to 150 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to +125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance

Protection / Safety Features

  • Undervoltage lock-out protection for primary and secondary-side including fault feedback
  • Over-current detection for SiC MOSFETs with current-sense terminal
  • Ultrafast short-circuit monitoring
  • Turn off overvoltage limitation (Advanced Active Clamping)

Full Safety and Regulatory Compliance

  • 100% production partial discharge test
  • 100% production HIPOT compliance testing
  • Reinforced insulation, VDE V 0884-10 certified
  • UL 1577 recognition pending

Green Package

  • Halogen free and RoHS compliant

Applications

  • General purpose and servo drives
  • UPS, PV, welding inverters and power supplies
  • Other industrial applications

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