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SCALE-iDriver ICs

The SCALE-iDriver Family of gate driver ICs, optimized for driving IGBTs,traditional MOSFETs and SiC MOSFETs, are the first products to bring Power Integrations’ pioneering FluxLink magneto-inductive bi-directional communications technology to 1200 V and 1700 V driver applications.

  • FluxLink technology eliminates the need for short-lived opto-electronics and associated compensation circuitry, thereby enhancing operational stability while reducing system complexity
  • Advanced system safety and protection features, commonly found in medium- and high-voltage applications, enhance product reliability
  • Innovative eSOP package features 9.5 mm of creepage and a Comparative Tracking Index (CTI) = 600, ensuring substantial operating voltage margin and high system reliability
  • Silicon carbide (SiC) MOSFET gate driver ICs deliver the highest peak-output gate current available without an external boost stage and can be configured to support different gate-drive voltages matching the range of requirements seen in today’s SiC MOSFETs
  • AEC-Q100 qualified for automotive applications SCALE-iDriver ICs can drive up to 8A @ 125°C junction temperature, and support 600, 650, 750 and 1200V IGBT and SiC inverter designs up to several hundred kW without a booster stage

Power Integrations talks about SCALE-iDriver

Products
Product
Data Sheet
Description
Max Breakdown Voltage
Power Switch
SIC118xKQ

Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

Data Sheet View PDF Description

Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

Max Breakdown Voltage 750 V, 1200 V Power Switch SiC MOSFET
SIC1182K

Up to 8 A Single Channel SiC MOSFET Gate Driver Providing Advanced Active Clamping and Reinforced Isolation Up to 1200 V

Data Sheet View PDF Description

Up to 8 A Single Channel SiC MOSFET Gate Driver Providing Advanced Active Clamping and Reinforced Isolation Up to 1200 V

Max Breakdown Voltage 600 V, 1200 V Power Switch SiC MOSFET
SID11xxKQ

Single Channel IGBT/MOSFET Gate Driver with Reinforced Isolation for Automotive Applications

Data Sheet View PDF Description

Single Channel IGBT/MOSFET Gate Driver with Reinforced Isolation for Automotive Applications

Max Breakdown Voltage 600 V, 1200 V Power Switch IGBT, MOSFET
SID11x1K

Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Galvanic Isolation up to 650 V Blocking Voltage

Data Sheet View PDF Description

Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Galvanic Isolation up to 650 V Blocking Voltage

Max Breakdown Voltage 650 V, 1200 V Power Switch IGBT, MOSFET
SID1102K

Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

Data Sheet View PDF Description

Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

Max Breakdown Voltage 600 V, 1200 V Power Switch IGBT, MOSFET
SID11x2K

Galvanically Isolated Single-channel Gate Driver ICs with Advanced Safety & Protection Features

Data Sheet View PDF Description

Galvanically Isolated Single-channel Gate Driver ICs with Advanced Safety & Protection Features

Max Breakdown Voltage 600 V, 1200 V Power Switch IGBT, MOSFET