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2SC0435T2G1C-17

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

Applications
Product Details

2SC0435T is a SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0435T drives all common IGBT modules up to 3600 A  / 1700 V. Embedded-paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported

Advantages of the Technology 

The 2SC0435T is one of the most compact driver core available for industrial applications, with a footprint of only 57.2 x 51.6 mm and profile of 20 mm. The SCALE-2+ chipset reduces the component count by up to 85% compared to conventional solutions, thus significantly increasing reliability and reducing costs.

The 2SC0435T combines a complete two-channel driver core with all components required for driving, including: isolated DC/DC converter; short-circuit protection; as well as supply voltage monitoring. Each of the two output channels is electrically-isolated from the primary side and the other secondary channel. 

IGBT Mode

An output current of 35 A and 4 W drive power is available per channel, making the 2SC0435T a suitable driver choice for both high-power modules and parallel-connected IGBT modules. In dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level. 

Excellent EMC performance allows safe and reliable operation in even harsh industrial environments. The 2SC0435T is suited for high-power IGBTs with blocking voltages up to 1700 V. 

MOSFET Mode

A dedicated MOSFET mode is implemented in the 2SC0435T. It allows any gate voltage swing of +10 V…+20 V / 0 V to make the most of the driver’s 100 kHz switching speed. 

With its high output power, very short delay, and extremely small jitter, the 2SC0435T driver core has been specifically designed for high-power and ultra-fast switching, fully exploiting the capabilities of state-of-the-art MOS power devices. 

Driving Parallel-Connected IGBTs

The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort. 

Specifications
Max Switching Frequency 100.00 kHz
IGBT Voltage Class 1700 V
Technology SCALE-2+
Power - Output/Channel (Max) 6.00 W
Interface Type Electrical
Number of Channels 2
Gate Peak Current (Max) +35 A
Product Type Board
Product Sub-Type Driver Core
Supported Module Type IGBT N-Channel MOSFET
Main/Peripheral N/A
Supported Topologies 2-level Voltage Source 3-level NP-Clamped - Type 1 3-level NP-Clamped - Type 2 Multi-Level NP-Clamped
Protection Features Adv Active Clamping Short Circuit UVLO(Sec-side) UVLO(Pri-side)
Conformal Coated? Yes
Driving Mode Halfbridge Direct-Independent
Logic Input Voltage 5
Supply Voltage (Typ) 15.00 V
Gate Turn-on Voltage +15.00 V
Gate Turn-off Voltage --10.10 V
Time - Output Rise 20.00 ns
Time - Output Fall 20.00 ns
Isolation Technology Galvanic
Isolation Type Reinforced
Gate Peak Current (Min) -35
Specifications