SEMICON China 2025 (Shanghai)

Power Integrations invites you to register for the SEMICON China Asia Compound Semiconductor Conference. On March 27th, PI's technical experts will deliver a special presentation on the market prospects of ultra-high voltage gallium nitride technology. Don't miss this exciting content!

Special Presentation: Silicon Carbide vs. Ultra-High Voltage Gallium Nitride: Impact and Competition

• Session 4: Gallium Nitride, Silicon Carbide Materials, Equipment, and Power Device Applications
• Date and Time: Thursday, March 27th, 2:25 PM to 2:50 PM
• Presenter: Jason Yan, Senior Technical Training Manager at Power Integrations

Gallium nitride not only outperforms silicon carbide in terms of performance but also offers cost advantages. However, its lower voltage resistance has limited its applications to consumer products and mains electricity scenarios. PI has recently launched the world's first 1700 V gallium nitride power device, capable of replacing silicon carbide in flyback applications. This presentation will provide a high-level comparison of gallium nitride and silicon carbide performance and propose a future commercial roadmap.