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SID1102K

Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

애플리케이션
필터 제품 숨기기
  • 필터
    • Supported Module Type
      지원되는 모듈 유형
    • Protection Features
      보호 기능
    • Supported Topologies
      지원되는 토폴로지
1 - 1 개 제품 총 1 개 전시
Product Parts
제품
데이터 시트
IGBT 전압 등급
게이트 피크 전류 (최대)
최대 스위칭 주파수
지원되는 모듈 유형
논리 입력 전압
보호 기능
기술
인터페이스 유형
지원되는 토폴로지
공급 전압 (일반)
격리 유형
격리 기술
시간 - 출력 하락
시간 - 출력 상승
드라이브 모드
메인 / 주변
병렬 지원?
Data Sheet PDF 보기
IGBT Voltage Class 1200 V
Gate Peak Current (Max) +5 A
Max Switching Frequency 75.0 kHz
Supported Module Type IGBT, N-Channel MOSFET
Logic Input Voltage 5
Protection Features Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
Technology SCALE-iDriver
Interface Type Electrical
Supported Topologies 2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
Supply Voltage (Typ) 5 V
Isolation Type Reinforced
Isolation Technology Fluxlink
Time - Output Fall 14 ns
Time - Output Rise 29 ns
Driving Mode Direct-Independent
Main/Peripheral N/A
Paralleling Support? No

The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.

Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.

  • IGBT gate driver with wide flexible use to drive IGBT modules up to 1200 V and IGBT current 50 A up to 3600 A.
  • Single channel providing up to 5 A peak gate drive current without boosters
  • Auxiliary outputs for external high and lowside n-channel booster stage for increased peak drive current up to 60A
  • Undervoltage log out
  • Integrated FluxLink technology providing safe isolation between primary-side and secondary-side
  • Rail-to-rail stabilized output voltage
  • Unipolar supply voltage for secondary-side
  • Suitable for 600 V / 650 V / 1200 V IGBT and MOSFET switches
  • Up to 75 kHz switching frequency
  • Propagation delay jitter ±5 ns
  • -40 °C to 125 °C operating ambient temperature
  • High common-mode transient immunity
  • eSOP package with 9.5 mm creepage and clearance

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