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RDK-747 - 65 W Charger Using InnoSwitch3-EP (750 V PowiGaN Switch)

65 W charger using PowiGaN-based InnoSwitch3-EP (INN3679C-H606)

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Design Type Reference Design Reports (RDR)
トポロジー Flyback
Vout 1 20.00 V
Vin (min) 90
Vin (max) 265
P (NoLoad) 40.00 mW
CV/CC CV/CC
Efficiency 92.50%
EU ErP Compliant? Yes
絶縁型? Yes
Number of outputs 1
出力 65.00 W
OVP? Yes
Associated Parts INN3679C-H606
Gerber File der-747_gerber.zip
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ビデオ

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White Paper - Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications
White Paper - Evaluating the Safety Isolation of the Package in an Integrated Power Device
PI 线上直播点看 - 1250 V 氮化镓扩展WBG器件应用范围
PowiGaN in a Solar Race Car - Team αCentauri Completes World Solar Challenge
Who Needs 900 V GaN?
InnoSwitch3-EP ICs with 900 V PowiGaN Switch Support Industrial Applications Up to 100 W
GaN, SiC or Traditional Silicon? Be Technology Agnostic to Get the Best for Your Application - Bodo's Wide Bandgap Event 2022
Triumphing over the Challenges of Increased Power Delivery - PowerUP Expo 2022
GaN Explained - Part 1 - What is GaN?
PI Webinar On-Demand - EU Energy Label Reform
PI Webinar On-Demand - PowiGaN Technology
PI Webinar On-Demand - Industry Tech Days Pt 1: GaN Switches Are Changing the Rules for Offline Power
New Features in InnoSwitch3
Introduction to InnoSwitch3
InnoSwitch3 - Synchronous Rectification
InnoSwitch3 Cross Regulation

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