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SID1102K

Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

애플리케이션
제품 상세 정보

The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.

Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.

명세서
명세서
최대 스위칭 주파수 75.00 kHz
IGBT 전압 등급 1200 V
기술 SCALE-iDriver
인터페이스 유형 Electrical
채널 수 1
게이트 피크 전류 (최대) +5 A
상품 유형 IC
Product Sub-Type Driver IC
지원되는 모듈 유형
IGBT
N-Channel MOSFET
메인 / 주변 N/A
지원되는 토폴로지
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
병렬 지원?
보호 기능
Basic Active Clamping
Adv Soft Shutdown
Dynamic Adv Active Clamping
Short Circuit
UVLO(Sec-side)
UVLO(Pri-side)
등각 코팅?
드라이브 모드 Direct-Independent
논리 입력 전압 5
공급 전압 (일반) 5.00 V
시간 - 출력 상승 29.00 ns
시간 - 출력 하락 14.00 ns
격리 기술 Fluxlink
격리 유형 Reinforced
Gate Boosting? Yes
Gate Peak Current (Min) -5