์†”๋ฃจ์…˜ ์ฐพ๊ธฐ ๊ธฐ์ˆ  ์ง€์›

2SC0115T2A0C-12

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

์• ํ”Œ๋ฆฌ์ผ€์ด์…˜
๋ฐ์ดํ„ฐ ์‹œํŠธ
PDF ๋‹ค์šด๋กœ๋“œ PDF ๋ณด๊ธฐ

์ œํ’ˆ ์ƒ์„ธ ์ •๋ณด

Leveraging SCALE-2+ integrated circuit and isolated transformer technology for DC/DC power and switching signal transmission, the new 2SC0115T IGBT driver core improves system reliability and performance by eliminating the need for an opto-coupler. The IGBT driver coreโ€™s reinforced electrical isolation targets systems with a working voltage of 900 V, which is typical for 1200 V IGBT modules and complies with the PD2 and OV II requirements of IEC 60664-1 and IEC 61800-5-1. The 2SC0115T IGBT gate driver core supports modules up to 2400 A and switching frequencies of up to 50 kHz.

๋ช…์„ธ์„œ

๋ช…์„ธ์„œ
์ตœ๋Œ€ ์Šค์œ„์นญ ์ฃผํŒŒ์ˆ˜ 50.00 kHz
IGBT ์ „์•• ๋“ฑ๊ธ‰ 1200 V
๊ธฐ์ˆ  SCALE-2+
์ถœ๋ ฅ ์ „๋ ฅ / ์ฑ„๋„-์ตœ๋Œ€ 1.40 W
์ธํ„ฐํŽ˜์ด์Šค ์œ ํ˜• Electrical
์ฑ„๋„ ์ˆ˜ 2
๊ฒŒ์ดํŠธ ํ”ผํฌ ์ „๋ฅ˜ (์ตœ๋Œ€) +15 A
์ƒํ’ˆ ์œ ํ˜• Board
Product Sub-Type Driver Core
์ง€์›๋˜๋Š” ๋ชจ๋“ˆ ์œ ํ˜•
IGBT
N-Channel MOSFET
๋ฉ”์ธ / ์ฃผ๋ณ€ N/A
์ง€์›๋˜๋Š” ํ† ํด๋กœ์ง€
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
๋ณดํ˜ธ ๊ธฐ๋Šฅ
Adv Active Clamping
Short Circuit
UVLO(Sec-side)
UVLO(Pri-side)
๋“ฑ๊ฐ ์ฝ”ํŒ…? Yes
๋“œ๋ผ์ด๋ธŒ ๋ชจ๋“œ Direct-Independent
๋…ผ๋ฆฌ ์ž…๋ ฅ ์ „์•• 5
๊ณต๊ธ‰ ์ „์•• (์ผ๋ฐ˜) 15.00 V
๊ฒŒ์ดํŠธ ํ„ด์˜จ ์ „์•• +15.00 V
๊ฒŒ์ดํŠธ ํ„ด ์˜คํ”„ ์ „์•• --8.50 V
์‹œ๊ฐ„ - ์ถœ๋ ฅ ์ƒ์Šน 6.00 ns
์‹œ๊ฐ„ - ์ถœ๋ ฅ ํ•˜๋ฝ 12.00 ns
๊ฒฉ๋ฆฌ ๊ธฐ์ˆ  Galvanic
๊ฒฉ๋ฆฌ ์œ ํ˜• Reinforced
๊ฒŒ์ดํŠธ ํ”ผํฌ ์ „๋ฅ˜ (์ตœ์†Œ) -15