The 2SC0535T2 SCALE-2 dual-driver core combines compactness with broad applicability and cost efficiency. It is designed for high-reliability industrial and traction and drives all usual high-voltage IGBT modules up to 3300 V. Its embedded paralleling capability allows simple inverter design at higher power ratings. Multi-level topologies with 1700 V IGBTs with higher isolation requirements can also be easily supported.
Advantages of the Technology
The 2SC0535T is the most compact driver core in its voltage and power range, featuring a footprint of only 76.5 x 59.2 mm and an insertion height of 26 mm. The SCALE-2 chipset reduces the component count by up to 80% compared to conventional solutions, thus significantly increasing reliability and reducing costs.
The 2SC0535T combines a complete two-channel driver core with all components required for driving, such as short-circuit protection, Advanced Active Clamping, an isolated DC/DC converter as well as supply voltage monitoring. Each of the two output channels is electrically-isolated from the primary side and the other secondary channel.
An output current of 35 A and 5 W drive power is available per channel, making the 2SC0535T a suitable choice for both high-power modules and parallel-connected IGBT modules. In dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level. Moreover, the temperature range has been widened to cover low temperature applications down to -55 °C.
Excellent EMC performance allows safe and reliable operation in even harsh industrial conditions. The 2SC0535T driver has a creepage path of 44 mm and is suited for high-voltage IGBTs with blocking voltages up to 3.3 kV. The driver is UL-compliant and features clearance and creepage distances that enable it to meet pollution degree 2 and overvoltage category 2 according to EN-50178 and EN-50124. Therefore, the driver is an excellent choice for all traction and industrial applications. The 100%-tested, partial discharge-free transformer design guarantees safe operation over the expected lifetime.
Driving Parallel-Connected IGBTs
The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build a converter series with discrete modules as well as parallel-connected IGBTs without any additional development effort.
Read the article Direct parallel connection: How does it work?
|최대 스위칭 주파수||100.00 kHz|
|IGBT 전압 등급||3300 V|
|출력 전력 / 채널-최대||7.50 W|
|게이트 피크 전류 (최대)||+35 A|
|Product Sub-Type||Driver Core|
|지원되는 모듈 유형||IGBT|
|메인 / 주변||N/A|
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Adv Active Clamping
|논리 입력 전압||5|
|공급 전압 (일반)||15.00 V|
|게이트 턴온 전압||+15.00 V|
|게이트 턴 오프 전압||--10.80 V|
|시간 - 출력 상승||20.00 ns|
|시간 - 출력 하락||25.00 ns|
|Gate Peak Current (Min)||-35|