Live Webinar - 1250 V and 1700 V PowiGaN for 800 VDC AI Data Centers - Electronics for U

As AI drives the urgent need for greater power density, high-voltage Gallium Nitride (GaN) technology has emerged as the future of power conversion. This study presents how Power Integrations’ 1250 V and 1700 V PowiGaN™ switches address the specific requirements of NVIDIA’s 800 VDC AI data center architectures.

By utilizing 1250 V GaN solutions, complex stacked topologies can be simplified into a single-stage half-bridge LLC, outperforming 1200 V SiC MOSFETs in terms of efficiency, thermal performance, and Figure of Merit (FOM). The D-Mode Cascode structure further provides a wide gate drive margin and superior reliability compared to E-mode devices. These advancements enable high-frequency operation (up to 1 MHz), delivering a cost-effective, high-density power solution essential for next-generation AI computing infrastructure.

Speaker

Harshavardhan Vuyyuru is a Technical Program Manager at Power Integrations, India, with over 13 years of experience in high‑efficiency AC‑DC and high‑voltage power conversion. He has contributed to the development of key product platforms such as HiperPFS‑5 and HiperLCS‑2 and has worked on high‑power EV charger designs. Harshavardhan partners closely with engineering teams to deliver robust, production‑ready power solutions.