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2SC0435T2F1C-17

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

產品規格型錄
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產品詳情

2SC0435T is a SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0435T drives all common IGBT modules up to 3600 A  / 1700 V. Embedded-paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported

Advantages of the Technology 

The 2SC0435T is one of the most compact driver core available for industrial applications, with a footprint of only 57.2 x 51.6 mm and profile of 20 mm. The SCALE-2+ chipset reduces the component count by up to 85% compared to conventional solutions, thus significantly increasing reliability and reducing costs.

The 2SC0435T combines a complete two-channel driver core with all components required for driving, including: isolated DC/DC converter; short-circuit protection; as well as supply voltage monitoring. Each of the two output channels is electrically-isolated from the primary side and the other secondary channel. 

IGBT Mode

An output current of 35 A and 4 W drive power is available per channel, making the 2SC0435T a suitable driver choice for both high-power modules and parallel-connected IGBT modules. In dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level. 

Excellent EMC performance allows safe and reliable operation in even harsh industrial environments. The 2SC0435T is suited for high-power IGBTs with blocking voltages up to 1700 V. 

MOSFET Mode

A dedicated MOSFET mode is implemented in the 2SC0435T. It allows any gate voltage swing of +10 V…+20 V / 0 V to make the most of the driver’s 100 kHz switching speed. 

With its high output power, very short delay, and extremely small jitter, the 2SC0435T driver core has been specifically designed for high-power and ultra-fast switching, fully exploiting the capabilities of state-of-the-art MOS power devices. 

Driving Parallel-Connected IGBTs

The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort. 

產品規格
產品規格
最大開關頻率 100.00 kHz
IGBT電壓等級 1700 V
技術 SCALE-2+
輸出功率/通道 - 最大 6.00 W
接口類型 Electrical
通道數 2
柵極峰值電流 (最大) +35 A
產品類別 Board
Product Sub-Type Driver Core
支持的模組種類
IGBT
N-Channel MOSFET
主/外圍 N/A
支持的拓撲
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
並行支持?
保護功能
Adv Active Clamping
Short Circuit
UVLO(Sec-side)
UVLO(Pri-side)
保形塗層? Yes
驅動模式
Halfbridge
Direct-Independent
邏輯輸入電壓 5
電源電壓 (典型) 15.00 V
柵極導通電壓 +15.00 V
柵極關斷電壓 --10.10 V
時間 - 輸出上升 20.00 ns
時間 - 輸出下降 20.00 ns
隔離技術 Galvanic
隔離類型 Reinforced
Gate Boosting?
Gate Peak Current (Min) -35