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SID1102K

Up to 5 A Single Channel IGBT/MOSFET Gate Driver Providing Reinforced Isolation up to 1200 V IGBT and MOSFET

Applications
Product Details

The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.

Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.

Specifications
Specifications
Max Switching Frequency 75.00 kHz
IGBT Voltage Class 1200 V
Technology SCALE-iDriver
Interface Type Electrical
Number of Channels 1
Gate Peak Current (Max) +5 A
Product Type IC
Product Sub-Type Driver IC
Supported Module Type
IGBT
N-Channel MOSFET
Main/Peripheral N/A
Supported Topologies
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
Paralleling Support?
Protection Features
Basic Active Clamping
Adv Soft Shutdown
Dynamic Adv Active Clamping
Short Circuit
UVLO(Sec-side)
UVLO(Pri-side)
Conformal Coated?
Driving Mode Direct-Independent
Logic Input Voltage 5
Supply Voltage (Typ) 5.00 V
Time - Output Rise 29.00 ns
Time - Output Fall 14.00 ns
Isolation Technology Fluxlink
Isolation Type Reinforced
Gate Boosting? Yes
Gate Peak Current (Min) -5