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Up to 8 A Single Channel SiC MOSFET Gate Driver Providing Advanced Active Clamping and Reinforced Isolation Up to 1200 V

Product Details

The SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 A (typical).

Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with temperature- and process-compensated output impedance guarantee safe operation even in harsh conditions.

Furthermore, this gate driver IC has a new feature, advanced active clamping (at turn-off phase), combining short-circuit protection (at and during turn-on phase) as well as overvoltage limitation, through a single sensing pin. If the driven semiconductor provides a current-sense terminal, adjustable over-current detection is supported.

Max Switching Frequency 150.00 kHz
IGBT Voltage Class 1200 V
Technology SCALE-iDriver
Interface Type Electrical
Number of Channels 1
Gate Peak Current (Max) +8 A
Product Type IC
Product Sub-Type Driver IC
Supported Module Type Silicon Carbide
Main/Peripheral N/A
Supported Topologies
2-level Voltage Source
3-level NP-Clamped - Type 1
3-level NP-Clamped - Type 2
Multi-Level NP-Clamped
Paralleling Support?
Protection Features
Adv Active Clamping
Dynamic Adv Active Clamping
Short Circuit
Conformal Coated?
Driving Mode Direct-Independent
Logic Input Voltage 5
Supply Voltage (Typ) 5.00 V
Time - Output Rise 22.00 ns
Time - Output Fall 18.00 ns
Isolation Technology Fluxlink
Isolation Type Reinforced
Gate Boosting?
Gate Peak Current (Min) -8