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LXA08B600

Fast Silicon Diode with Balanced EMI and Switching Speed

  • VRRM     - 600 V
  • IF(AVG)   - 3 A - 20 A
  • QRR       - 21 nC - 51 nC

Applications
Product Details

Qspeed diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.

Product Highlights

Features

  • Low QRR, Low IRRM, Low tRR
  • High dIF/dt capable (1000A/µs)
  • Soft recovery

Benefits

  • Increases efficiency
    • Eliminates need for snubber circuits
    • Reduces EMI filter component size & count
  • Enables extremely fast switching

Applications

  • Power Factor Correction (PFC) Boost Diode
  • Motor drive circuits
  • DC-AC Inverters

Related Information

Simulate Qspeed diodes on PowerEsim

Power Integrations has partnered with PowerEsim to bring you a fast and accurate way to simulate the superior performance of Qspeed products. Follow the link by clicking on the PowerEsim logo below.

PowerEsim_90_90.gif

Specifications
24931
Specifications
Current - Forward (avg) 8.00 A
Voltage - Forward (typ) 2.10 V
Voltage - Reverse Recovery (Max) 600.00V
IC Package TO-263AB
Integrated Diode
Internal Switch
Mounting Type Through Hole
PowiGaN?
Temperature - Operating (Min) -55 °C
Temperature - Operating (Max) 150 °C
Product Sub-Type Diode