SemiSouth is delivering industry's first 650 V silicon carbide JFET power transistors. The fast switching speeds, large current handling capability combined with the superior thermal properties of SiC makes these devices ideal candidates for power electronic applications. They employ vertical trench JFET structures, which allow for industry-leading on-resistance per unit area, as much as five to ten times lower than competing technologies.
PI now represents SemiSouth Laboratories' specialized silicon carbide transistors and diodes. To read more about this and other SemiSouth product news, visit the SemiSouth website.